| PART |
Description |
Maker |
| CBR6-100 CBR6-010 CBR6-020 CBR6-040 CBR6-060 CBR6- |
3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 6.0 AMPS, 100 THRU 1000 VOLTS
Leaded Bridge Rectifier General Purpose
|
CENTRAL[Central Semiconductor Corp]
|
| EH8008ZI EH8006ZI EH8004ZI EH8012ZI EH10002ZI EH10 |
3 PHASE BRIDGE MODULES 3 PHASE, 80 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
3 PHASE BRIDGE MODULES 3 PHASE, 80 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
3 PHASE BRIDGE MODULES 3 PHASE, 100 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
TV 13C 13#22D SKT WALL RECP
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1110C 1102D 1106C 1102C 1110FD 1110FC 1102UFD 1102 |
200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1.5 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| 1102E 1110FE 1106FE 1106UFE 1102UFE 1110UFE |
200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1.4 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| EH7502BS EH7506BS EH7508B EH7510B EH7512B |
Single Phase Bridge
75 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
75 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
|
| 26FBP10 26FBP08 26FBP06 26FBP02 |
2.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
2.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
2.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
2.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
|
| 3402B 3402FB |
200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 3 PHASE, 20 A, SILICON, BRIDGE RECTIFIER DIODE
|
Electronic Theatre Controls, Inc.
Voltage Multipliers, Inc.
|
| CBR3A-P060 CBR10A-J080 CBR6A-080 CBR10A-J020 CBR10 |
Bridge Rectifiers, Controlled Avalanche 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers/ Controlled Avalanche
Leaded Bridge Rectifier Controlled Avalanche
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| DF02MA-E3 VISHAYSEMICONDUCTORS-DF01MA-E3 |
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| GBPC602 |
3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
GENERAL SEMICONDUCTOR INC
|
| GSIB620/72-E3 |
2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| VS247 |
2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
|
|
